FDN358P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDN358P
Datasheet:
Description:
MOSFETs SuperSOT-3 SMD/SMT P-Channel number of channels:1 500 mW -30 V Continuous Drain Current (ID):1.5 A 5.6 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Length | 2.92 mm |
| Width | 3.05 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 125 MΩ |
| Height | 940 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -1.5 A |
| Max Power Dissipation | 460 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | -1.9 V |
| Number of Channels | 1 |
| Input capacitance | 182 pF |
| Continuous Drain Current (ID) | 1.5 A |
| Rds On Max | 125 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 12 ns |
| Element Configuration | Single |
| Fall Time | 13 ns |
| Rise Time | 13 ns |
| Dual Supply Voltage | -30 V |
| Gate Charge | 5.6 nC |
| Drain to Source Resistance | 125 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -1.9 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 1795
Distributors
pcbx
pcbxUnit Price$0.27456
Ext.Price$0.27456
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.27456 | $0.27456 |
| 10 | $0.24396 | $2.43960 |
| 50 | $0.21677 | $10.83850 |
| 100 | $0.18778 | $18.77800 |
| 500 | $0.16267 | $81.33500 |
| 1000 | $0.15638 | $156.38000 |
| 3000 | $0.15033 | $450.99000 |
| 5000 | $0.14181 | $709.05000 |